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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGS13002D/D Designer's? Data Sheet MGS13002D Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This IGBT contains a built–in free wheeling diode and a gate protection zener. Fast switching characteristics result in efficient POWERLUX operation at higher frequencies. IGBT • Built–In Free Wheeling Diode 0.5 A @ 25°C • Built–In Gate Protection Zener Diode 600 V • Industry Standard Package (TO92 — 1.0 Watt) • High Speed Eoff: Typical 6.5 mJ @ IC = 0.3 A; TC = 125°C and dV/dt = 1000 V/ms • Robust High Voltage Termination • Robust Turn–Off SOA C E C G G CASE 029–05 E TO–226AE TO92 (1.0 WATT) MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameters Symbol Value Unit Collector