View mgw20n60drev0x datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGW20N60D/D Designer's? Data Sheet MGW20N60D Insulated Gate Bipolar Transistor Motorola Preferred Device with Anti-Parallel Diode N–Channel Enhancement–Mode Silicon Gate IGBT & DIODE IN TO–247 20 A @ 90°C This Insulated Gate Bipolar Transistor (IGBT) is co–packaged 32 A @ 25°C with a soft recovery ultra–fast rectifier and uses an advanced 600 VOLTS termination scheme to provide an enhanced and reliable high SHORT CIRCUIT RATED voltage–blocking capability. Short circuit rated IGBT’s are specifi- cally suited for applications requiring a guaranteed short circuit withstand time such as Motor Control Drives. Fast switching characteristics result in efficient operations at high frequencies. Co–packaged IGBT’s sav