View mje13009 detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
MJE13009 SILICON NPN SWITCHING TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE DESCRIPTION The MJE13009 is a multiepitaxial mesa NPN transistor. It is mounted in Jedec TO-220 plastic package, intended for use in motor controls, switching regulators, deflection circuits, etc. 3 2 1 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCEO Collector-Emitter Voltage (IB = 0) 400 V V Collector-Emitter Voltage (V = -1.5 V) 700 V CEV BE V Emitter-Base Voltage (I = 0) 9 V EBO C IC Collector Current 12 A ICM Collector Peak Current (tp ? 10 ms) 24 A I Base Current 6 A B I Base Peak Current (t ? 10 ms) 12 A BM p I Emitter Current 18 A E IEM Emitter Peak Current 36 A o Ptot Total Power Dissipation at Tc ? 25 C 100 W o T Storage Temperature... See More ⇒
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mje13009 Design, MOSFET, Power
mje13009 RoHS, Compliant, Service, Triacs, Semiconductor
mje13009 Innovation, IC, Electricity
BJT Parameters and How They Relate
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
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