View mje3055 utc datasheet:

UTC MJE3055T PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MJE3055T is designed for general purpose of amplifier and switching applications. 1 TO-220 1:BASE 2: COLLECTOR 3: EMITTER ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO 70 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V Total Power Dissipation(Ta=25°C) Pc 75 W Collector current Ic 10 A Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C Base Current IB 6 A ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector-emitter breakdown voltage BVCEO Ic=200mA 60 V Collector-Base Break