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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA BY MMBD110T1/D MMBD110T1 MMBD330T1 MMBD770T1 Schottky Barrier Diodes Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. They are housed in the SOT–323/SC–70 package 3 which is designed for low–power surface mount applications. • Extremely Low Minority Carrier Lifetime 1 2 • Very Low Capacitance CASE 419A–02, STYLE 2 • Low Reverse Leakage SOT-323/SC–70 • Available in 8 mm Tape and Reel MAXIMUM RATINGS Rating Symbol Value Unit Reverse Voltage MMBD110T1 VR 7.0 Vdc MMBD330T1 30 MMBD770T1 70 Forward Power Dissipation PF 120 mW TA = 25°C Junction Temperature TJ –55 to +125 °C Storage T