View mmbd2835lt1rev1 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBD2835LT1/D Monolithic Dual Switching Diodes MMBD2835LT1 MMBD2836LT1 CATHODE 3 1 ANODE 3 1 2 2 CATHODE CASE 318–08, STYLE 12 MAXIMUM RATINGS (EACH DIODE) SOT–23 (TO–236AB) Rating Symbol Value Unit Reverse Voltage MMBD2835LT1 VR 35 Vdc MMBD2836LT1 75 Forward Current IF 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKING MMBD2835