View mmbd2837lt1rev1d datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBD2837LT1/D Monolithic Dual Switching Diodes MMBD2837LT1 MMBD2838LT1 ANODE 1 3 3 2 CATHODE ANODE 1 2 MAXIMUM RATINGS (EACH DIODE) Rating Symbol Value Unit CASE 318–08, STYLE 9 Peak Reverse Voltage VRM 75 Vdc SOT–23 (TO–236AB) D.C. Reverse Voltage MMBD2837LT1 VR 30 Vdc MMBD2838LT1 50 Peak Forward Current IFM 450 mAdc 300 Average Rectified Current IO 150 mAdc 100 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 4