View mmbt2369 datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2369LT1/D MMBT2369LT1 Switching Transistors COLLECTOR * MMBT2369ALT1 3 NPN Silicon *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol Value Unit 1 Collector–Emitter Voltage VCEO 15 Vdc 2 Collector–Emitter Voltage VCES 40 Vdc Collector–Base Voltage VCBO 40 Vdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Emitter–Base Voltage VEBO 4.5 Vdc Collector Current — Continuous IC 200 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal