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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2484LT1/D Low Noise Transistor MMBT2484LT1 COLLECTOR NPN Silicon 3 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector–Emitter Voltage VCEO 60 Vdc CASE 318–08, STYLE 6 Collector–Base Voltage VCBO 60 Vdc SOT–23 (TO–236AB) Emitter–Base Voltage VEBO 6.0 Vdc Collector Current — Continuous IC 50 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ,