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View mmbt2907awt1rev0 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

mmbt2907awt1rev0

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2907AWT1/D Preliminary Information MMBT2907AWT1 General Purpose Transistor PNP Silicon Motorola Preferred Device These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 package which is designed for low power surface mount applications. COLLECTOR 3 3 1 1 BASE 2 2 CASE 419–02, STYLE 3 EMITTER SOT–323/SC–70 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –60 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –600 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 150 mW TA = 25°C Thermal Resistance Junction to

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