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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA20LT1/D General Purpose Amplifier MMBTA20LT1 NPN Silicon COLLECTOR 3 1 3 BASE 1 2 2 EMITTER CASE 318–08, STYLE 6 MAXIMUM RATINGS SOT–23 (TO–236AB) Rating Symbol Value Unit Collector–Emitter Voltage VCEO 40 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 100 mAdc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA = 25°C Derate above 25°C 2.4 mW/°C Thermal Resistance Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature TJ, Tstg –55 to +150 °C DEVICE MARKIN