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mmbta42_utc

UTC MMBTA42 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC MMBTA42 are high voltage transistors, designed for telephone switch and high voltage switch. FEATURES 1 *Collector-Emitter voltage: VCEO=300V(UTC MMBTA42) *High current gain *Collector Dissipation: Pc(max)=625mW SOT-23 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage V UTC MMBTA42 VCBO 300 Collector-Emitter Voltage V UTC MMBTA42 VCEO 300 Emitter-Base Voltage VEBO 6 V Collector Dissipation Pc 625 mW Collector Current Ic 500 mA Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise spec

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