View mmbta92l datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA92LT1/D High Voltage Transistors * MMBTA92LT1 COLLECTOR PNP Silicon 3 MMBTA93LT1 *Motorola Preferred Device 1 BASE 2 EMITTER 3 MAXIMUM RATINGS 1 Rating Symbol MMBTA92 MMBTA93 Unit 2 Collector–Emitter Voltage VCEO –300 –200 Vdc Collector–Base Voltage VCBO –300 –200 Vdc CASE 318–08, STYLE 6 SOT–23 (TO–236AB) Emitter–Base Voltage VEBO –5.0 –5.0 Vdc Collector Current — Continuous IC –500 mAdc DEVICE MARKING MMBTA92LT1 = 2D; MMBTA93LT1 = 2E THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR–5 Board,(1) PD 225 mW TA = 25°C Derate above 25°C 1.8 mW/°C Thermal Resistance, Junction to Ambient RqJA 556 °C/W Total Device Dissipation PD 300 mW Alumina Substrate,(2) TA =