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POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

mpsa05re

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA05/D Amplifier Transistors NPN COLLECTOR COLLECTOR MPSA05 3 3 MPSA06 * 2 2 PNP BASE BASE NPN PNP MPSA55 1 1 * MPSA56 EMITTER EMITTER Voltage and current are negative MAXIMUM RATINGS for PNP transistors MPSA05 MPSA06 MPSA55 MPSA56 Rating Symbol Unit *Motorola Preferred Device Collector–Emitter Voltage VCEO 60 80 Vdc Collector–Base Voltage VCBO 60 80 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector Current – Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts 1 Derate above 25°C 12 mW/°C 2 3 Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range CASE 29–04, STYLE 1 TO–92 (TO–22

Keywords

 mpsa05re Datasheet, Design, MOSFET, Power

 mpsa05re RoHS, Compliant, Service, Triacs, Semiconductor

 mpsa05re Database, Innovation, IC, Electricity

 

 
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