View mpsa27re datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA27/D Darlington Transistor NPN Silicon MPSA27 COLLECTOR 3 BASE 2 1 2 3 EMITTER 1 CASE 29–04, STYLE 1 MAXIMUM RATINGS TO–92 (TO–226AA) Rating Symbol MPSA25 MPSA27 Unit Collector–Emitter Voltage VCES 40 60 Vdc Emitter–Base Voltage VEBO 10 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation PD 625 mW @ TA = 25°C 5.0 mW/°C Derate above 25°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage V(BR)