View mpsa28re datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA28/D Darlington Transistors MPSA28 NPN Silicon * MPSA29 COLLECTOR 3 *Motorola Preferred Device BASE 2 EMITTER 1 MAXIMUM RATINGS Rating Symbol MPSA28 MPSA29 Unit 1 2 Collector–Emitter Voltage VCES 80 100 Vdc 3 Collector–Base Voltage VCBO 80 100 Vdc CASE 29–04, STYLE 1 Emitter–Base Voltage VEBO 12 Vdc TO–92 (TO–226AA) Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °C/W Thermal