View mpsa42re datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA42/D High Voltage Transistors * MPSA42 NPN Silicon MPSA43 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol MPSA42 MPSA43 Unit CASE 29–04, STYLE 1 Collector–Emitter Voltage VCEO 300 200 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO 300 200 Vdc Emitter–Base Voltage VEBO 6.0 6.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200 °