View mpsa92m utc datasheet:

UTC MPSA92M PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-300V *Collector Dissipation: Pc(max)=625mW 1 *Low collector-Emitter saturation voltage APPLICATIONS *Telephone switching *High voltage switch TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL RATING UNIT Collector-base voltage VCBO -300 V Collector-emitter voltage VCEO -300 V Emitter-base voltage VEBO -6 V Collector dissipation(Ta=25°C) Pc 625 mW Collector current Ic -800 mA Junction Temperature Tj 150 °C Storage Temperature TSTG -55 ~ +150 °C ELECTRICAL CHARACTERISTICS(Tj=25°C,unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collecto