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mpsa92re

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSA92/D High Voltage Transistors * MPSA92 PNP Silicon MPSA93 COLLECTOR *Motorola Preferred Device 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol MPSA92 MPSA93 Unit CASE 29–04, STYLE 1 Collector–Emitter Voltage VCEO –300 –200 Vdc TO–92 (TO–226AA) Collector–Base Voltage VCBO –300 –200 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –500 mAdc Total Device Dissipation @ TA = 25°C PD 625 mW Derate above 25°C 5.0 mW/°C Total Device Dissipation @ TC = 25°C PD 1.5 Watts Derate above 25°C 12 mW/°C Operating and Storage Junction TJ, Tstg –55 to +150 °C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 200

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