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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50N06EL/D Advance Information MTB50N06EL TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistors TMOS POWER FET D2PAK for Surface Mount LOGIC LEVEL Logic Level TMOS (L2TMOS ? ) 50 AMPERES 60 VOLTS N–Channel Enhancement–Mode Silicon Gate RDS(on) = 0.028 OHM These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, convert- ers, solenoid and relay drivers. This Logic Level Series part is specified to operate with level logic gate–to–source voltage of 5 volt and 4 volt. ? • Silicon Gate for Fast Switching Speeds • Low RDS(on) — 0.028 ? max D • Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode