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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTB50N06VL/D Designer's? Data Sheet MTB50N06VL TMOS V? Motorola Preferred Device Power Field Effect Transistor D2PAK for Surface Mount TMOS POWER FET N–Channel Enhancement–Mode Silicon Gate 42 AMPERES 60 VOLTS TMOS V is a new technology designed to achieve an on–resistance RDS(on) = 0.032 OHM area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed TM switching applications in power supplies, converters and power motor controls, these devices are particularly