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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTW20N50E/D Designer's? Data Sheet MTW20N50E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor TO-247 with Isolated Mounting Hole TMOS POWER FET N–Channel Enhancement–Mode Silicon Gate 20 AMPERES 500 VOLTS This high voltage MOSFET uses an advanced termination RDS(on) = 0.24 OHM scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition, this advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a ? drain–to–source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor contro