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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTY20N50E/D Designer's? Data Sheet MTY20N50E TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This high voltage MOSFET uses an advanced termination 20 AMPERES scheme to provide enhanced voltage–blocking capability without 500 VOLTS degrading performance over time. In addition, this advanced TMOS RDS(on) = 0.26 OHM E–FET is designed to withstand high energy in the avalanche and commutation modes. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge ? circuits where diode speed and commutating safe operating areas are cri