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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MGP20N60U/D Designer's? Data Sheet MGP20N60U Insulated Gate Bipolar Transistor N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor (IGBT) uses an advanced IGBT IN TO–220 termination scheme to provide an enhanced and reliable high 20 A @ 90°C voltage–blocking capability. It also provides low on–voltage which 31 A @ 25°C results in efficient operation at high current. 600 VOLTS • Industry Standard TO–220 Package VERY LOW • High Speed Eoff: 63 mJ/A typical at 125°C ON–VOLTAGE • Low On–Voltage – 1.7 V typical at 10 A, 125°C • Robust High Voltage Termination • ESD Protection Gate–Emitter Zener Diodes C G G C E CASE 221A–09 E STYLE 9 TO–220AB MAXIMUM RATINGS (TJ = 25°C unless oth