View mj21193r datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Order this document MOTOROLA by MJ21193/D SEMICONDUCTOR TECHNICAL DATA PNP * MJ21193 NPN Silicon Power Transistors * MJ21194 The MJ21193 and MJ21194 utilize Perforated Emitter technology and are *Motorola Preferred Device specifically designed for high power audio output, disk head positioners and linear applications. 16 AMPERE COMPLEMENTARY • Total Harmonic Distortion Characterized SILICON POWER • High DC Current Gain – hFE = 25 Min @ IC = 8 Adc TRANSISTORS • Excellent Gain Linearity 250 VOLTS • High SOA: 2.5 A, 80 V, 1 Second 250 WATTS CASE 1–07 TO–204AA (TO–3) MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO 250 Vdc Collector–Base Voltage VCBO 400 Vdc Emitter–Base Voltage VEBO 5 Vdc Collector–Emitter Voltage – 1.5 V VCEX 400 Vdc C
Keywords
mj21193r Datasheet, Design, MOSFET, Power
mj21193r RoHS, Compliant, Service, Triacs, Semiconductor
mj21193r Database, Innovation, IC, Electricity
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