All Transistors. Datasheet

 

View mje13009 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

mje13009

Order this document MOTOROLA by MJE13009/D SEMICONDUCTOR TECHNICAL DATA MJE13009* *Motorola Preferred Device Designer's? Data Sheet 12 AMPERE SWITCHMODE Series NPN SILICON POWER TRANSISTOR NPN Silicon Power Transistors 400 VOLTS The MJE13009 is designed for high–voltage, high–speed power switching inductive 100 WATTS circuits where fall time is critical. They are particularly suited for 115 and 220 V switchmode applications such as Switching Regulators, Inverters, Motor Controls, Solenoid/Relay drivers and Deflection circuits. SPECIFICATION FEATURES: • VCEO(sus) 400 V and 300 V • Reverse Bias SOA with Inductive Loads @ TC = 100_C • Inductive Switching Matrix 3 to 12 Amp, 25 and 100_C . . . tc @ 8 A, 100_C is 120 ns (Typ). • 700 V Blocking Capability • SOA and Switchi

Keywords

 mje13009 Datasheet, Design, MOSFET, Power

 mje13009 RoHS, Compliant, Service, Triacs, Semiconductor

 mje13009 Database, Innovation, IC, Electricity

 

 
Back to Top

 


 
.