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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50N06EL/D Designer's? Data Sheet MTP50N06EL TMOS E-FET.? Motorola Preferred Device Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET This advanced TMOS E–FET is designed to withstand high 50 AMPERES energy in the avalanche and commutation modes. The new energy 60 VOLTS efficient design also offers a drain–to–source diode with a fast RDS(on) = 0.028 OHM recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor ? controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage