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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP50N06VL/D Designer's? Data Sheet MTP50N06VL TMOS V Motorola Preferred Device Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET TMOS V is a new technology designed to achieve an on–resis- 42 AMPERES tance area product about one–half that of standard MOSFETs. This 60 VOLTS new technology more than doubles the present cell density of our RDS(on) = 0.032 OHM 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and TM power motor controls, these devices are particularly well suited for brid