View pdta123et 3 datasheet:

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTA123ET PNP resistor-equipped transistor Product specification 1999 May 21 Supersedes data of 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123ET FEATURES • Built-in bias resistors R1 and R2 (typ. 2.2 k? each) • Simplification of circuit design 3 ndbook, 4 columns • Reduces number of components and board space. 3 R1 1 APPLICATIONS R2 2 • Especially suitable for space reduction in interface and 1 2 driver circuits Top view MAM100 • Inverter circuit configurations without use of external resistors. Fig.1 Simplified outline (SOT23) and symbol. DESCRIPTION PNP resistor-equipped transistor in a SOT23 plastic package. NPN complement: PDTC123ET. PINNING 1 3