View phe13003au 1 datasheet:

Philips Semiconductors Product specification Silicon Diffused Power Transistor PHE13003AU GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in the SOT533 envelope intended for use in high frequency electronic lighting ballast applications, converters and inverters, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V VCBO Collector-Base voltage (open emitter) - 700 V VCEO Collector-emitter voltage (open base) - 400 V IC Collector current (DC) - 1.5 A ICM Collector current peak value - 3 A Ptot Total power dissipation Tmb ? 25 ?C - 50 W VCEsat Collector-emitter saturation voltage IC = 1.0 A;IB = 0.25 A - 1.0 V hFE IC = 1.0 A; VCE = 5 V - 25 tfi Fall time