View phe13009 1 datasheet:

Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor PHE13009 GENERAL DESCRIPTION The PHE13009 is a silicon npn power switching transistor in the TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V VCBO Collector-Base voltage (open emitter) - 700 V VCEO Collector-emitter voltage (open base) - 400 V IC Collector current (DC) - 12 A ICM Collector current peak value - 24 A Ptot Total power dissipation Tmb ? 25 ?C - 80 W VCEsat Collector-emitter saturation voltage IC = 5.0 A;IB = 1.0 A 0.32 1.0 V hFEsat IC = 5.0