View phw20n50e 2 datasheet:

Philips Semiconductors Product specification PowerMOS transistors PHW20N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 20 A g • Low thermal resistance RDS(ON) ? 0.27 ? s GENERAL DESCRIPTION PINNING SOT429 (TO247) N-channel, enhancement mode PIN DESCRIPTION field-effect power transistor, intended for use in off-line switched 1 gate mode power supplies, T.V. and computer monitor power supplies, 2 drain d.c. to d.c. converters, motor control circuits and general purpose 3 source switching applications. tab drain 2 1 3 The PHW20N50E is supplied in the SOT429 (TO247) conventional leaded package. LIMITING VALUES L