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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by PZTA42T1/D High Voltage Transistor PZTA42T1 Surface Mount Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON BASE HIGH VOLTAGE 1 TRANSISTOR SURFACE MOUNT EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value Unit 1 Collector-Emitter Voltage (Open Base) VCEO 300 Vdc 2 3 Collector-Base Voltage (Open Emitter) VCBO 300 Vdc Emitter-Base Voltage (Open Collector) VEBO 6.0 Vdc CASE 318E-04, STYLE 1 Collector Current (DC) IC 500 mAdc TO-261AA Total Power Dissipation @ TA = 25°C(1) PD 1.5 Watts Storage Temperature Range Tstg –65 to +150 °C Junction Temperature TJ 150 °C DEVICE MARKING P1D THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, R?JA 83.3 °C/W Ju