View pzta92t1rev2x datasheet:

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by PZTA92T1/D High Voltage Transistor PZTA92T1 PNP Silicon COLLECTOR 2,4 Motorola Preferred Device BASE 1 SOT–223 PACKAGE PNP SILICON EMITTER 3 HIGH VOLTAGE TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –300 Vdc 4 Collector–Base Voltage VCBO –300 Vdc Emitter–Base Voltage VEBO –5.0 Vdc 1 2 Collector Current IC –500 mAdc 3 Total Power Dissipation up to TA = 25°C(1) PD 1.5 Watts CASE 318E–04, STYLE 1 Storage Temperature Range Tstg –65 to +150 °C TO–261AA Junction Temperature TJ 150 °C DEVICE MARKING P2D THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance from Junction to Ambient(1) R?JA 83.3 °C/W ELECTRICAL CHARACTERISTICS (TA =