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rfp50n06

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 3575.4 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using • rDS(ON) = 0.022? the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding • Peak Current vs Pulse Width Curve performance. They were designed for use in applications • UIS Rating Curve such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated • 175oC Operating Temperature directly from integrated circuits. Symbol Formerly developmental type TA49018. D Ordering Informatio

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