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View rn1101fs-1106fs l0-1-2-3-4-5 sot823 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

rn1101fs-1106fs__l0-1-2-3-4-5_sot823

RN1101FS~RN1106FS TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Bias Resistor built-in Transistor) RN1101FS,RN1102FS,RN1103FS RN1104FS,RN1105FS,RN1106FS Switching, Inverter Circuit, Interface Circuit and Unit: mm Driver Circuit Applications • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. 1 • Complementary to RN2101FS~RN2106FS 3 2 0.8±0.05 Equivalent Circuit and Bias Resistor Values 0.1±0.05 1.0±0.05 C Type No. R1 (k?) R2 (k?) RN1101FS 4.7 4.7 0.1±0.05 R1 B RN1102FS 10 10 1.BASE fSM 2.EMITTER RN1103FS 22 22 3.COLLECOTR RN1104FS 47 47 E RN1105FS 2.2 47 JEDEC ? RN1106FS 4.7 47 JEITA ? TOSHIBA 2-1E1A

Keywords

 rn1101fs-1106fs l0-1-2-3-4-5 sot823 Datasheet, Design, MOSFET, Power

 rn1101fs-1106fs l0-1-2-3-4-5 sot823 RoHS, Compliant, Service, Triacs, Semiconductor

 rn1101fs-1106fs l0-1-2-3-4-5 sot823 Database, Innovation, IC, Electricity

 

 
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