View rn2970-rn2971 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
RN2970,RN2971 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2970,RN2971 Unit: mm Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Including two devices in US6 (ultra super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1970~RN1971 Equivalent Circuit Maximum Ratings (Ta = 25° JEDEC ? °C) (Q1, Q2 Common) ° ° EIAJ ? TOSHIBA 2-2J1B Characterisstic Symbol Rating Unit Weight: 6.8mg Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V Collector current IC -100 mA Collector power dissipation PC* 200 mW Junction temperature Tj 150 C Storage temperature
Keywords
rn2970-rn2971 Datasheet, Design, MOSFET, Power
rn2970-rn2971 RoHS, Compliant, Service, Triacs, Semiconductor
rn2970-rn2971 Database, Innovation, IC, Electricity
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