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View rn4608 vi sot23-6 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

rn4608___vi_____sot23-6

RN4608 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) RN4608 Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications Unit in mm Includeing two devices in SM6 (super mini type with 6 leads) With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Equivalent Circuit and Bias Resister Values R1: 22k? R2: 47k? (Q1, Q2 Common) Q1 Maximum Ratings (Ta = 25° °C) ° ° JEDEC ? Characteristic Symbol Rating Unit EIAJ ? Collector-base voltage VCBO -50 V TOSHIBA 2-3N1A Collector-emitter voltage VCEO -50 V Weight: 0.015g Emitter-base voltage VEBO -7 V Collector current IC -100 mA Q2 Maximum Ratings (Ta = 25° °C) ° ° Char

Keywords

 rn4608 vi sot23-6 Datasheet, Design, MOSFET, Power

 rn4608 vi sot23-6 RoHS, Compliant, Service, Triacs, Semiconductor

 rn4608 vi sot23-6 Database, Innovation, IC, Electricity

 

 
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