View s1231 datasheet:
POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG
Bulletin I0143J 01/01 S1231 PHASE CONTROL THYRISTORS Junction Size : Square 180 mils - IR180SH12H/ S1231 Wafer Size : 4" VRRM / VDRM Class : 1200 V Passivation Process : Glassivated MESA Reference IR Packaged Part : n. a. Major Ratings and Characteristics Parameters Units Test Conditions VTM Typical On-state Voltage 1.3 V TJ = 25°C, IT = 25 A VRRM / VDRM Reverse Breakdown Voltage 1200 V TJ = 25°C, IRRM = 300 µA (1) IGT Required DC Gate Current to Trigger 5 to 45 mA TJ = 25° C, anode supply = 6 V, resistive load VGT Max. Required DC Gate Voltage to Trigger 1.9 V TJ = 25° C, anode supply = 6 V, resistive load IH Holding Current Range 5 to 150 mA Anode supply = 6 V, resistive load IL Maximum Latching Current 400 mA Anode supply = 6 V, resistive load (1) Nitrogen flow on die ed
Keywords
s1231 Datasheet, Design, MOSFET, Power
s1231 RoHS, Compliant, Service, Triacs, Semiconductor
s1231 Database, Innovation, IC, Electricity
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