View sgh20n60rufd sam detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
CO-PAK IGBT SGH20N60RUFD FEATURES TO-3P * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V @ Ic=20A * High Input Impedance * CO-PAK, IGBT with FRD Trr = 50nS (Typ) C APPLICATIONS * AC & DC Motor controls G * General Purpose Inverters * Robotics , Servo Controls * Power Supply E * Lamp Ballast ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage VGES 20 V Gate-Emitter Voltage IC 32 A Collector Current @ Tc = 25 20 A Collector Current @ Tc = 100 ICM (1) 60 A Pulsed Collector Current IF 25 A Diode Continuous Forward Current @ Tc = 100 IFM 220 A Diode Maximum Forward Current PD 190 W Maximum Power Dissipation @Tc = 25 75 W Maximum Power Dissipation... See More ⇒
Keywords
sgh20n60rufd sam Design, MOSFET, Power
sgh20n60rufd sam RoHS, Compliant, Service, Triacs, Semiconductor
sgh20n60rufd sam Innovation, IC, Electricity
BJT Parameters and How They Relate
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
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