View sgm2014 datasheet:

SGM2014AN Preliminary GaAs N-channel Dual Gate MES FET Description M-281 The SGM2014AN is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features � Ultra small package � Low voltage operation � Low noise: NF = 1.5dB (typ.) at 900MHz � High gain: Ga = 18dB (typ.) at 900MHz � Low cross-modulation � High stability � Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25�C) � Drain to source voltage VDSX 12 V � Gate 1 to source voltage VG1S �5 V � Gate 2 to source voltage VG2S �5 V � Drain