View sgm2014am datasheet:

SGM2014AM Preliminary GaAs N-channel Dual Gate MES FET Description The SGM2014AM is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including TV tuners, cellular radios, and DBS IF amplifiers. Features • Low voltage operation • Low noise: NF = 1.5dB (typ.) at 900MHz • High gain: Ga = 18dB (typ.) at 900MHz • Low cross-modulation • High stability • Built-in gate-protection diode Application UHF band amplifier, mixer and oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source voltage VDSX 12 V • Gate 1 to source voltage VG1S –5 V • Gate 2 to source voltage VG2S –5 V • Drain current ID 55 mA • Allowable