View sgw20n60ruf sam detailed specifications:
POWER MOSFET, IGBT, IC, TRIACS DATABASE
N-CHANNEL IGBT SGW20N60RUF FEATURES D2-PAK * Short Circuit rated 10uS @Tc=100 * High Speed Switching * Low Saturation Voltage VCE(sat) = 2.0 V @ Ic=20A * High Input Impedance APPLICATIONS C * AC & DC Motor controls * General Purpose Inverters G * Robotics , Servo Controls * Power Supply * Lamp Ballast E ABSOLUTE MAXIMUM RATINGS Symbol Rating Units Characteristics VCES 600 V Collector-Emitter Voltage VGES 20 V Gate-Emitter Voltage IC 32 A Collector Current @ Tc = 25 20 A Collector Current @ Tc = 100 ICM (1) 60 A Pulsed Collector Current PC 190 W Maximum Power Dissipation @Tc = 25 75 W Maximum Power Dissipation @Tc = 100 Tsc 10 uS Short Circuit Withstand Time Tj -55 150 Operating Junction Temperature Tstg -55 150 Storage Temperature Rang... See More ⇒
Keywords
sgw20n60ruf sam Design, MOSFET, Power
sgw20n60ruf sam RoHS, Compliant, Service, Triacs, Semiconductor
sgw20n60ruf sam Innovation, IC, Electricity
BJT Parameters and How They Relate
LIST
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BJT: ZDT6705 | GA1L4Z | GA1A4M | SBT42 | 2SA200-Y | 2SA200-O
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