View si3457dv datasheet:

Si3457DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY V (V) R (W) I (A) VDS (V) RDS(ON) (W) ID (A) 0.065 @ VGS = –10 V "4.3 –30 –30 0.100 @ VGS = –4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 5 2 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA =25_C UNLESS OTHERWISE NOTED) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS –30 V V Gate-Source Voltage VGS "20 TA = 25_C "4.3 Continuous Drain Current (TJ = 150_C)A ID Continuous Drain Current (TJ = 150 C)A ID TA = 70_C "3.4 A Pulsed Drain Current IDM "20 Continuous Source Current (Diode Conduction)A IS –1.7 TA = 25_C 2 Maximum Power DissipationA PD W Maximum Power Dissi ationA PD W TA = 70_C 1.3 Operating Junction and Storage Temperature Range TJ, Tstg –55 t