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View smbd2835 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

smbd2835

Silicon Switching Diode Array SMBD 2835 SMBD 2836 For high-speed switching applications Common anode Type Marking Ordering Code Pin Configuration Package1) (tape and reel) SMBD 2835 sA3 Q68000-A8547 SOT-23 SMBD 2836 sA2 Q68000-A8436 Maximum Ratings Parameter Symbol Values Unit SMBD 2835 SMBD 2836 Reverse voltage VR 30 50 V Peak reverse voltage VRM 35 75 Forward current IF 200 mA Surge forward current, t = 1 µs IFS 4.5 A Total power dissipation, TS =31?C Ptot 330 mW Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ? 500 K/W Junction - soldering point Rth JS ? 360 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. 5.91 Se

Keywords

 smbd2835 Datasheet, Design, MOSFET, Power

 smbd2835 RoHS, Compliant, Service, Triacs, Semiconductor

 smbd2835 Database, Innovation, IC, Electricity

 

 
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