View smbt3904pn s3p sot363 datasheet:

SMBT 3904PN NPN Silicon Switching Transistor Array Preliminary data 4 • High current gain 5 • Low collector-emitter saturation voltage 6 • Two (galvanic) internal isolated NPN/PNP Transistors in one package 3 2 VPS05604 1 PIN Configuration Type Marking Ordering Code Package NPN-Transistor 1 = E 2 = B 6 = C SMBT 3904PN s3P Q62702-C SOT-363 PNP-Transistor 4 = E 5 = B 6 = C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 40 V Collector-base voltage VCBO 40 Emitter-base voltage VEBO 6 DC collector current IC 200 mA Total power dissipation, TS = 115 °C Ptot 250 mW Junction temperature Tj 150 °C Storage temperature Tstg - 65...+150 Thermal Resistance 1) Junction ambient RthJA ? 275 K/W Thermal resistance, chip case RthJC ? 140 1) Package