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View smbt3904s s1a sot363 datasheet:

POWER MOSFET, IGBT, IC, TRIACS DATABASE. Electronic Supply. INNOVATION CATALOG

smbt3904s__s1a____sot363

SMBT 3904S NPN Silicon Switching Transistor Array 4 • High DC current gain: 0.1mA to 100mA 5 • Low collector-emitter saturation voltage 6 • Two ( galvanic) internal isolated Transistors with high matching in one package • Complementary type: SMBT 3906S (PNP) 3 2 VPS05604 1 Type Marking Ordering Code Pin Configuration Package SMBT 3904S s1A Q62702-A1201 1/4=E1/E2 2/5=B1/B2 3/6=C2/C1 SOT-363 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage 40 V VCEO Collector-base voltage 60 VCBO Emitter-base voltage 6 VEBO DC collector current 200 mA IC 250 mW Total power dissipation, TS = 115 °C Ptot Junction temperature 150 °C Tj Storage temperature - 65...+150 Tstg Thermal Resistance 1) Junction ambient K/W RthJA ? 275 Junction - soldering point

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