View spp20n60s5 datasheet:

SPP20N60S5 Final data SPB20N60S5 Cool MOS™ Power Transistor VDS 600 V Feature RDS(on) 0.19 ? • New revolutionary high voltage technology ID 20 A • Worldwide best RDS(on) in TO 220 P-TO263-3-2 P-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity Type Package Ordering Code Marking SPP20N60S5 P-TO220-3-1 Q67040-S4751 20N60S5 SPB20N60S5 P-TO263-3-2 Q67040-S4171 20N60S5 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Value Unit A Continuous drain current ID TC = 25 °C 20 TC = 100 °C 13 40 Pulsed drain current, tp limited by Tjmax ID puls 690 mJ Avalanche energy, single pulse EAS ID=-A, VDD=50V 1 Avalanche energy, repetitive tAR limited by Tjmax1