View ss9015 sam datasheet:

SS9015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER TO-92 • Complement to SS9014 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 mA Collector Current IC -100 mW Collector Dissipation PC 450 Junction Temperature TJ 150 Storage Temperature TSTG -55 ~ 150 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (T =25 ) A Characteristic Symbol Test Conditions Min Typ Max Unit Collector-Base Breakdown Voltage BVCBO IC = -100 , IE =0 -50 V Collector-Emitter Breakdown Voltage BVCEO IC = -1mA, IB =0 -45 V Emitter-Base Breakdown Voltage BVEBO IE = -100 , IC =0 V -5 Collector Cut-off Current ICBO VCB = -50V, IE =0 -50 nA E