View sxt3906 datasheet:

PNP Silicon Switching Transistor SXT 3906 High current gain: 0.1 mA to 100 mA Low collector-emitter saturation voltage Type Marking Ordering Code Pin Configuration Package1) (tape and reel) 1 2 3 SXT 3906 2A Q68000-A8397 B C E SOT-89 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE0 40 V Collector-base voltage VCB0 40 Emitter-base voltage VEB0 5 Collector current IC 200 mA Total power dissipation, TS = 100 ?C Ptot 1W Junction temperature Tj 150 ?C Storage temperature range Tstg – 65 … + 150 Thermal Resistance Junction - ambient2) Rth JA ? 120 K/W Junction - soldering point Rth JS ? 50 1) For detailed information see chapter Package Outlines. 2) Package mounted on epoxy pcb 40 mm ? 40 mm ? 1.5 mm/6 cm2 Cu. 5.91 Semiconductor Group 1 SXT 3